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Title: A G-band broadband balanced power amplifier module based on Cascode mHEMTs
Authors: Amado Rey, Belén
Campos Roca, Yolanda
Friesicke, Christian
Van Raay, Friedbert
Leuther, Arnulf
Ambacher, Oliver
Massler, Hermann
Keywords: Amplificador de potencia balanceado;Banda G;Guía de ondas coplanar conectada a tierra (GCPW);Módulo;Circuito integrado monolítico de ondas milimétricas (MMIC);WR-5;Balanced power amplifier;G-band;Module;Monolithic millimeter-wave integrated circuit (MMIC)
Issue Date: 2018
Source: B. Amado-Rey, Y. Campos-Roca, C. Friesicke, F. van Raay, H. Massler, A. Leuther, and O. Ambacher. (2018). A G-band broadband balanced power amplifier module based on Cascode mHEMTs
Abstract: The first full G-band power amplifier module demonstrated in GaAs metamorphic high electron mobility transistor (mHEMT) technology has been developed for use as a driver amplifier in instrumentation. The circuit integrated in this module uses a compact balanced cascode topology and is based on a 35-nm mHEMT technology in a grounded coplanar waveguide environment. High compactness is achieved due to the use of a small ground-to-ground spacing of 14 μm and an advanced process with three metallization layers. The millimeter-wave integrated circuit exhibits a linear gain higher than 15.3 dB and return losses better than 10 dB from 118 to 236 GHz, which represents an ultrabroad relative bandwidth (RBW) of 67%. A peak output power of 10 dBm is achieved at 200 GHz. The WR-5 module uses broadband transitions, which show insertion losses of less than 1.5 dB. It demonstrates a small-signal gain that exceeds 13.4 dB in the whole G-band (RBW ≥ 54%). Large-signal characterization exhibits power levels higher than 3.6 dBm from 130 to 210 GHz (RBW = 47%). This module achieves the highest bandwidth in G-band and the highest output power when comparing it with modules based on similar technologies.
Description: Publicado en IEEE Microwave and Wireless Components Letters el 19 August 2018 (Volume 28, Issue 0, October 2018) ;
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