Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10662/18330
Títulos: | GCPW GaAs broadside couplers at H-Band and application to balanced power amplifiers |
Autores/as: | Amado Rey, Belén Campos Roca, Yolanda Friesicke, Christian Wagner, Sandrine Ambacher, Oliver |
Palabras clave: | Amplificador balanceado;Acoplador lateral;Transistor metamórfico de alta movilidad electrónica (mHEMT);Circuito integrado monolítico de microondas (MMIC);Acoplador de 90°;Amplificador de fuerza;FET apilado;Acoplador tándem-X;Balanced amplifier;Broadside coupler;Metamorphic high-electron-mobility transistor (mHEMT);Monolithic microwave integrated circuit (MMIC);90°coupler;Power amplifier;Stacked-FET;Tandem-X coupler |
Fecha de publicación: | 2018 |
Fuente: | Amado-Rey, B., Campos-Roca, Y., Friesicke, C., Wagner, S. and Ambacher, O. (2018). GCPW GaAs broadside couplers at H-Band and application to balanced power amplifiers |
Resumen: | This paper reports on the first H-band broadside hybrid coupler based on a three-metallization layer process and a grounded coplanar waveguide environment. The performance of this integrated coupler is carefully examined through electromagnetic (EM) simulations and experimental evaluation, and compared to a Tandem-X hybrid, which is based on a two-metallization layer process and requires twice the chip area. The EM analysis covers S-parameter simulations of the coupler structures as well as even- and odd-mode impedance analysis of the edge- and broadside-coupled lines. The broadside hybrid exhibits insertion losses of 3.8-4.3 dB in the through and coupled ports from 246 to 297 GHz. This corresponds to a fractional bandwidth of 19%. In this frequency range, the imbalance is lower than 0.2 dB and a phase difference of 93.6° ± 1.4° is obtained. It is demonstrated that the broadside coupler overcomes the performance of Tandem-X hybrids when applied to medium power amplifiers (MPAs). An MPA monolithic microwave integrated circuit based on triple-stacked FETs and broadside couplers achieves at least 4.5 dBm at 300 GHz and large-signal gain of 7.5 dB at the 3-dB compression point. |
Descripción: | Publicado en IEEE Transactions on Microwave Theory and Techniques el 28 October 2018, (Volume 67, Issue 1, January 2019) con DOI: 10.1109/TMTT.2018.2873335 |
URI: | http://hdl.handle.net/10662/18330 |
Colección: | DTCYC - Artículos |
Archivos
Archivo | Descripción | Tamaño | Formato | |
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TMTT_2018_2873335_preprint.pdf | 2 MB | Adobe PDF | Descargar |
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